Patent · US Active

Memory cell

US12406721B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 8, 2022
Grant dateSep 2, 2025
Priority date
Expiry dateNov 28, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/54
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.