Semiconductor chamber components with advanced dual layer nickel-containing coatings
US12406832B2 · kind B2 · utility
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Key dates
| Filing date | Sep 19, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Apr 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Exemplary methods for a coating a component of a semiconductor processing system may include forming a nickel-containing alloy on an exposed surface the component of the semiconductor processing system. The methods may include forming plasma effluents of a fluorine-containing precursor. The methods may include contacting the nickel-containing alloy with the plasma effluents of the fluorine-containing precursor. The contacting may fluorinate a portion of the nickel-containing alloy to form a nickel-and-fluorine-containing material overlying the nickel-containing alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.