Electronic device manufacturing method
US12406889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Apr 19, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.