Semiconductor formation using hybrid oxidation
US12408318B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
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Key dates
| Filing date | May 15, 2019 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to forming a semiconductor using hybrid oxidation are described. An example method includes forming an opening to create an isolation region in a semiconductor substrate. The example method further includes depositing a first dielectric into the isolation region at a first oxidation rate. The example method further includes depositing a second dielectric into the isolation region at a second oxidation rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.