Memory device including a conductive film with interfacial roughness
US12408340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | May 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
According to one embodiment, a semiconductor device includes a tunnel insulating film, a charge trap film on the tunnel insulating film, and a block insulating film on the charge trap film. The charge trap film is between the tunnel insulating film and the block insulating film. A conductive film is on the block insulating film. The block insulating film is between the charge trap film and the conductive film. The conductive film includes a first metal film adjacent to the block insulating film and a second metal film on the first metal film. The first metal film is between the block insulating film and the second metal film. The first metal film has an interfacial roughness on a side facing the second metal film that is greater than an interfacial roughness on a side facing the block insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.