Device with dielectric metal oxide layers and semiconductor apparatus including the same
US12408353B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 16, 2021 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Apr 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MxOy; and a leakage current reducing layer including a metal oxide represented by Lay′M′y′Oz′.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.