Field effect transistor with stacked unit subcell structure

US12408403B2 · kind B2 · utility

Assignee

• MACOM Technology Solutions Holdings, Inc. · US

Inventors

• Kyle Bothe · Cary, US
• Jia Guo · Apex, US
• Yueying Liu · Morrisville, US
• Jeremy Fisher · Raleigh, US
• Scott Sheppard · Chapel Hill, US

Key dates

• Filing date: Jun 24, 2022
• Grant date: Sep 2, 2025
• Expiry date: Feb 17, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/254

Abstract

A transistor device includes a first unit subcell including having a first active region width extending in a first direction, and a second unit subcell having a second active region width extending in the first direction and arranged adjacent the first unit subcell in the first direction. The first unit subcell and the second unit subcell share a common drain contact and have separate gate contacts that are aligned in the first direction. Each unit subcell includes a field plate that is connected to a source contact outside the active region and that does not cross over the gate contact.