Inventor · Chapel Hill, NC, US

Scott Sheppard

100Patents

27h-index

53Co-inventors

93Inventor score

Filing activity: Apr 17, 1998 → Jun 24, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US6316793A	Nitride based transistors on semi-insulating silicon carbide substrates	Electricity	326	Expired
US7238560B2	Methods of fabricating nitride-based transistors with a cap layer and a recessed gate	Electricity	237	Expired
US6982204B2	Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses	Electricity	157	Expired
US7548112B2	Switch mode power amplifier using MIS-HEMT with field plate extension	Electricity	151	Active
US7045404B2	Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof	Electricity	123	Expired
US6583454B2	Nitride based transistors on semi-insulating silicon carbide substrates	Electricity	121	Expired
US6486502B1	Nitride based transistors on semi-insulating silicon carbide substrates	Electricity	121	Expired
US7875910B2	Integrated nitride and silicon carbide-based devices	Electricity	119	Active
US7125786B2	Method of forming vias in silicon carbide and resulting devices and circuits	Electricity	112	Expired
US7419892B2	Semiconductor devices including implanted regions and protective layers and methods of forming the same	Electricity	101	Expired
US7875914B2	Switch mode power amplifier using mis-HEMT with field plate extension	Electricity	99	Active
US7592211B2	Methods of fabricating transistors including supported gate electrodes	Electricity	97	Active
US8049252B2	Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices	Electricity	95	Active
US7906799B2	Nitride-based transistors with a protective layer and a low-damage recess	Electricity	95	Expired
US7709269B2	Methods of fabricating transistors including dielectrically-supported gate electrodes	Electricity	93	Active
US7855401B2	Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides	Electricity	92	Active
US7709859B2	Cap layers including aluminum nitride for nitride-based transistors	Electricity	89	Active
US7901994B2	Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers	Electricity	85	Active
US7332795B2	Dielectric passivation for semiconductor devices	Electricity	83	Expired
US7465967B2	Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions	Electricity	82	Expired
US7875537B2	High temperature ion implantation of nitride based HEMTs	Electricity	76	Active
US7456443B2	Transistors having buried n-type and p-type regions beneath the source region	Electricity	76	Expired
US7960756B2	Transistors including supported gate electrodes	Electricity	72	Active
US7892974B2	Method of forming vias in silicon carbide and resulting devices and circuits	Electricity	71	Active
US7550784B2	Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses	Electricity	69	Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.