Method for manufacturing a native emission matrix having doped and porosified In(x)GaN
US12408491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Aug 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, the second mesa comprising a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, c) electrochemically porosifying the second mesa, d) producing stacks on the mesas to form LED structures emitting at various wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.