Titanium silicon nitride barrier layer

US12408569B2 · kind B2 · utility

Assignee

• Eugenus, Inc. · US

Inventors

• Jae Seok Heo · Gunpo-si, KR
• Jerry Mack · San Jose, US
• Somilkumar J. Rathi · San Jose, US
• Niloy Mukherjee · Beaverton, US

Key dates

• Filing date: Oct 17, 2023
• Grant date: Sep 2, 2025
• Expiry date: Oct 20, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

The disclosed technology generally relates to a barrier layer comprising titanium silicon nitride, and more particularly to a barrier layer for nonvolatile memory devices, and methods of forming the same. In one aspect, a method of forming an electrode for a phase change memory device comprises forming over a semiconductor substrate an electrode comprising titanium silicon nitride (TiSiN) on a phase change storage element configured to store a memory state. Forming the electrode comprises exposing a semiconductor substrate to one or more cyclical vapor deposition cycles, wherein a plurality of the cyclical vapor deposition cycles comprises an exposure to a Ti precursor, an exposure to a N precursor and an exposure to a Si precursor.