Seamless gapfill of metal nitrides
US12410513B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jun 8, 2022 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Apr 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.