Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
US12411402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2020 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Apr 25, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a reflective mask blank comprising a phase shift film having a small change in the phase difference and/or reflectance of the phase shift film even in a case where the film thickness of the phase shift film changes.A reflective mask blank comprises a multilayer reflective film and a phase shift film in this order on a main surface of a substrate. The phase shift film comprises a lower layer and an uppermost layer. The lower layer is located between the uppermost layer and the multilayer reflective film. The lower layer is formed of a material in which the total content of ruthenium and chromium is 90 atomic % or more, or a material in which the total content of ruthenium, chromium, and nitrogen is 90 atomic % or more. The uppermost layer is formed of a material in which the total content of ruthenium, chromium, and oxygen is 90 atomic % or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.