Method for transferring a layer from a source substrate to a destination substrate
US12412786B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2023 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | May 4, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB32B2457/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of transferring a layer from a source substrate to a destination substrate, comprising the following steps: a) activating a bonding surface of said layer and a bonding surface of the destination substrate, by ion etching of said surfaces, or by sputtering of a bonding material onto said surfaces; and b) after step a), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate, wherein, during step a), a masking ring covers a peripheral portion of the bonding surface of said layer, and/or a masking ring covers a peripheral portion of the bonding surface of the destination substrate; and wherein steps a) and b) are carried out under vacuum and with no rupture of vacuum between the two steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.