Memory device including phase-change material
US12414309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2023 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jan 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A memory device including a phase-change material includes: a substrate; a first memory cell including a first selection layer and a first phase-change material layer, and a second memory cell including a second selection layer and a second phase-change material layer, wherein the first memory cell and the second memory cell are arranged apart from each other with an insulating layer therebetween in a normal direction of the substrate, wherein the first phase-change material layer and the second phase-change material layer include: a first layer including a thermal confinement material; and a second layer including a phase-change material, respectively, wherein the first layer and the second layer extend in a direction vertical to the substrate, and wherein the first phase-change material layer is physically isolated from the second phase-change material layer by the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.