Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die

US12414349B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Adrian Finney · Villach, AT
• Oliver Blank · Villach, AT
• Alessandro Ferrara · Villach, AT
• Stefan Tegen · Dresden, DE

Key dates

• Filing date: Sep 16, 2022
• Grant date: Sep 9, 2025
• Expiry date: Nov 25, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/115

Abstract

The application relates to a semiconductor die including a device in an active area of the die. The device includes a field electrode region formed in a field electrode trench extending vertically into a semiconductor body. The field electrode region includes a first and a second field electrode stacked vertically above each other in the field electrode trench. An edge termination structure laterally between the active area and a lateral edge region of the die includes a first and a second shield electrode arranged laterally consecutive between the active area and the lateral edge region to stepwise decrease an electrical potential between the edge region and the active area.