Substrate stripping method for semiconductor structure by irradiating AlGaN
US12414405B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Oct 10, 2020 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Apr 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first AlN layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first AlN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.