Film-forming method and film-forming system
US12416075B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Sep 15, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jun 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.