Plasma processing apparatus and plasma processing method using the same
US12417897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Jul 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.