Surface processing apparatus and surface processing method for SiC substrate
US12417909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | May 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.