Contact features of semiconductor device and method of forming same
US12417945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Nov 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.