Via-filling method of through-glass via substrate
US12417964B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 7, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Mar 31, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/49838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A via-filling method of a TGV substrate includes steps: filling a plurality of metal balls into a plurality of vias of the TGV substrate; using a heating process to melt the plurality of metal balls to form a liquid-state metal; and cooling down the liquid-state metal to form a solid-state metal inside the plurality of vias. Because the method needn't use solvents or fluxes, the solid-state metal inside the plurality of vias have better electric conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.