Semiconductor device and method of fabricating same
US12417977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2024 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | May 1, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.