Bonded semiconductor structure and method for forming the same
US12418009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2021 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | May 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device wafer includes a first insulating layer, a first device layer on the first insulating layer, and a first bonding layer on the first device layer. The second device wafer includes a second insulating layer, a second device layer on a first side of the second insulating layer, and a second bonding layer on the second device layer. The second device layer includes a second device region and a second transistor in the second device region. The second device wafer is bonded to the first device wafer by bonding the second bonding layer with the first bonding layer. A shielding structure is on a second side of the second insulating layer opposite to the first side and vertically overlapped with the second device region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.