Semiconductor structure and method for forming same
US12419028B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Sep 22, 2022 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate including a plurality of active pillars arranged at intervals; etching the active pillar to form an annular groove, in which the annular groove does not expose a top surface and a bottom surface of the active pillar; and forming a first semiconductor layer in the annular groove to form the semiconductor structure; in which a band gap of the first semiconductor layer is smaller than a band gap of the active pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.