Patent · US Active

Semiconductor structure, method for forming same, and layout structure

US12419038B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2022
Grant dateSep 16, 2025
Priority date
Expiry dateJan 26, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6757

Abstract

Embodiments of the disclosure provide a semiconductor substrate, a method for forming same, and a layout structure. The method includes: providing a semiconductor structure including a first region and a second region arranged in sequence along a second direction, the second region including active structures arranged in an array along a first direction and a third direction, each of the active structure at least including a channel structure, the first direction, the second direction, and the third direction being perpendicular to each other, and the first direction and the second direction being parallel to a surface of the semiconductor substrate; forming a gate structure on a surface of the channel structure; and forming a word line structure extending in the first direction on the first region. The word line structure is connected with the gate structure located on the same layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.