Semiconductor device and method of forming the same
US12419104B2 · kind B2 · utility
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10References
20Claims
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Key dates
| Filing date | Jan 11, 2023 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Mar 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.