Slurry composition and method of manufacturing integrated circuit device by using the same
US12421424B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 18, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Dec 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A slurry composition is used to treat a surface of a target structure including at least one of a first polishing target film and a second polishing target film, which include different materials from each other, by a chemical mechanical polishing (CMP) process. The slurry composition includes: polishing particles; a first inhibitor including a nonionic polymer to selectively bond to the first polishing target film; and a second inhibitor including an anionic polymer to selectively bond to the second polishing target film. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a target structure including at least one of a first polishing target film and a second polishing target film; applying the slurry composition onto the target structure; and treating a surface of the target structure by a CMP process while the slurry composition covers the target structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.