Low-k dielectric and processes for forming same
US12424438B2 · kind B2 · utility
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13References
20Claims
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Key dates
| Filing date | Feb 24, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Sep 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.