Fin field-effect transistor semiconductor device and method of forming the same
US12424443B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Oct 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field-effect transistor (“FinFET”) semiconductor device and method of forming the same. In one example, a semiconductor fin is formed over a semiconductor substrate. A conformal dielectric layer is formed on a top and side surfaces of the fin. A doped semiconductor layer is formed over the conformal dielectric layer, the doped semiconductor layer including a dopant. The doped semiconductor layer is heated thereby driving the dopant through the conformal dielectric layer and forming a doped region of the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.