Brian E. Goodlin
35Patents
6h-index
41Co-inventors
65Inventor score
Filing activity: Jul 30, 2004 → Dec 8, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10009001B2 | Devices with specific termination angles in titanium tungsten layers and methods for fabricating the same | Electricity | 25 | Active |
| US7833895B2 | TSVS having chemically exposed TSV tips for integrated circuit devices | Electricity | 19 | Active |
| US7018888B2 | Method for manufacturing improved sidewall structures for use in semiconductor devices | Electricity | 9 | Expired |
| US9896330B2 | Structure and method for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip | Electricity | 9 | Active |
| US8551890B2 | Showerhead for CVD depositions | Emerging Cross-Sectional Technologies | 7 | Active |
| US8043973B2 | Mask overhang reduction or elimination after substrate etch | Emerging Cross-Sectional Technologies | 6 | Active |
| US7229869B2 | Method for manufacturing a semiconductor device using a sidewall spacer etchback | Electricity | 6 | Expired |
| US9503047B2 | Bulk acoustic wave (BAW) device having roughened bottom side | Electricity | 6 | Active |
| US8617960B2 | Silicon microphone transducer | Electricity | 5 | Active |
| US9524881B2 | Method for fabricating specific termination angles in titanium tungsten layers | Electricity | 5 | Active |
| US8551248B2 | Showerhead for CVD depositions | Emerging Cross-Sectional Technologies | 5 | Active |
| US10233074B2 | Structures for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip | Electricity | 3 | Active |
| US7612454B2 | Semiconductor device with improved contact fuse | Electricity | 2 | Active |
| US9583336B1 | Process to enable ferroelectric layers on large area substrates | Electricity | 2 | Active |
| US10723616B2 | Structures for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip | Electricity | 2 | Active |
| US10840179B2 | Electronic devices with bond pads formed on a molybdenum layer | Electricity | 2 | Active |
| US8962350B2 | Multi-step deposition of ferroelectric dielectric material | Electricity | 1 | Active |
| US8026177B2 | Silicon dioxide cantilever support and method for silicon etched structures | Electricity | 1 | Active |
| US7413980B2 | Semiconductor device with improved contact fuse | Electricity | 1 | Active |
| US10680056B1 | IC with ion milled thin-film resistors | Electricity | 0 | Active |
| US11394361B2 | Buk acoustic wave resonator with guard rings having recessed space from electrode edge and periodic designs | Electricity | 0 | Active |
| US11616011B2 | IC having trench-based metal-insulator-metal capacitor | Electricity | 0 | Active |
| US12424443B2 | Fin field-effect transistor semiconductor device and method of forming the same | Electricity | 0 | Active |
| US10009008B2 | Bulk acoustic wave (BAW) device having roughened bottom side | Electricity | 0 | Active |
| US10651817B2 | Bulk acoustic wave resonator on a stress isolated platform | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.