3D NAND with inter-wordline airgap
US12424483B2 · kind B2 · utility
0Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jan 24, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.