Patent · US Active

Method for transferring a layer from a source substrate to a destination substrate

US12424497B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Julie Widiez · Grenoble, FR
Frank Fournel · Meylan, FR

Key dates

Filing date	May 4, 2023
Grant date	Sep 23, 2025
Priority date	—
Expiry date	May 4, 2043

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB32B2457/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of transferring a layer from a source substrate to a destination substrate, including the following steps: a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate c) removing the masking disk; d) activating the bonding surface of said layer and the bonding surface of the destination substrate; and e) placing into contact the bonding surface of said layer with the bonding surface of the destination substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.