Semiconductor laser diode including multiple active layers and a grating layer
US12424822B2 · kind B2 · utility
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Key dates
| Filing date | Sep 28, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Apr 24, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a semiconductor laser diode including multiple active layers and a grating layer. The semiconductor laser diode includes two (or more than two) active layers, a grating layer, and a tunnel junction. The grating layer and the tunnel junction are provided between the two active layers. The tunnel junction is electrically connected to the two active layers, and the two active layers share and are optically coupled to the grating layer, thereby improving the external quantum efficiency and slope efficiency of the semiconductor laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.