Vertical-cavity surface-emitting semiconductor laser diode with the mode filter
US12424824B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Oct 13, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Oct 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.