Semiconductor devices and data storage systems including the same
US12426264B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jan 20, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/845
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.