Switching device and memory device including the same
US12426275B2 · kind B2 · utility
0Cited by
15References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jan 24, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.