Semiconductor structure and method of manufacturing the same

US12426283B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wei-Yu Chou · Taichung, TW
• Yang-Che Chen · Hsinchu, TW
• Yi Yang · Baoshan, TW

Key dates

• Filing date: Jul 29, 2022
• Grant date: Sep 23, 2025
• Expiry date: Jan 24, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/20

Abstract

A semiconductor structure includes a recess extending into a substrate and an inductor device including a first isolation layer, a first magnetic layer over the first isolation layer, a second isolation layer over the first magnetic layer, and a conductive element surrounded by the second isolation layer, wherein at least a portion of the inductor device is disposed within the recess. A method of manufacturing a semiconductor structure includes disposing a first isolation layer on a surface of a substrate and extending into a recess formed on the surface; disposing a first magnetic layer over the first isolation layer; disposing a second isolation layer over the first magnetic layer to form a trench; disposing a conductive element in the trench; disposing a third isolation layer over the first magnetic layer, the conductive element and the second isolation layer; and disposing a second magnetic layer over the third isolation layer.