Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device
US12426285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Feb 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.