High electron mobility transistor
US12426294B2 · kind B2 · utility
0Cited by
7References
20Claims
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Key dates
| Filing date | Feb 24, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A high electron mobility transistor includes a channel layer; a barrier layer on the channel layer and having an energy bandgap greater than an energy bandgap of the channel layer; a gate structure on the barrier layer; a source electrode and a drain electrode spaced apart from each other on the barrier layer with the gate structure therebetween; a field plate electrically connected to the source electrode and extending above the gate structure; and a field dispersion layer in contact with the barrier layer and the drain electrode. The field dispersion layer may extend toward the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.