Semiconductor device including transistor having source/drain contract with convex curved surface
US12426305B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Feb 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device includes comprising a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode; a source/drain pattern on at least one side of the gate structure; and a source/drain contact on and connected with an upper surface of the source/drain pattern, the source/drain contact extending along a sidewall of the gate electrode, wherein an upper surface of the source/drain contact includes a convex curved surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.