Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof
US12426343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate structure includes a wide bandgap material layer having a channel region of a first conductivity type. A gate insulating layer is arranged directly on the channel region and has a first nitride layer that is arranged directly on the channel region. The gate insulating layer has a concentration of carbon atoms that is less than 1018 atoms/cm−3 at a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer. An electrically conductive gate electrode layer overlies the gate insulating layer so that the gate electrode layer is separated from the wide bandgap material layer by the gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.