Nitride-based semiconductor device and method for manufacturing the same
US12426345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2021 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Nov 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first source electrode, a second source electrode, and a drain electrode. The second nitride-based semiconductor layer includes a drift region doped, a first barrier region, and a second barrier region. The first and second barrier regions extend downward from a top surface of the second nitride-based semiconductor layer and are separated from each other by a portion of the drift region. The gate electrode is disposed on the first barrier region. The first source electrode is disposed on the portion of the drift region. The second source electrode is disposed on the second barrier region and is electrically coupled with the first source electrode. The drain electrode is connected to the first nitride-based semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.