Semiconductor structure
US12426353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jul 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor structure comprises a substrate having a first well region of a first conductive type, a second well region of a second conductive type, and a junction between the first well region and the second well region. The first conductive type and the second conductive type are complementary. A plurality of first dummy structures and second dummy structures and at least a first active region are defined in the first well region by an isolation structure. The first dummy structures are adjacent to the junction and respectively comprise a first metal silicide region and a first doped region of the first conductive type and between the first metal silicide region and the first well region. The first dummy structures are between the second dummy structures and the junction. The second dummy structures respectively comprise a second metal silicide region that direct contacts the first well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.