Optoelectronic semiconductor component

US12426408B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Binder · Brooklyn, US
• Andreas Rückerl · Konzell, DE
• Roland Zeisel · Tegernheim, DE
• Tobias Meyer · Durham, US
• Kerstin Neveling · Pentling, DE
• Christine Rafael · Donaustauf, DE
• Moses Richter · Erlangen, DE
• Rainer Hartmann · Regensburg, DE
• Clemens Vierheilig · Tegernheim, DE

Key dates

• Filing date: Nov 3, 2020
• Grant date: Sep 23, 2025
• Expiry date: Apr 17, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142

Abstract

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.