Patent · US Active

Template for growing a crystal of a two-dimensional material

US12428749B2 · kind B2 · utility

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Key dates

Filing dateJul 12, 2023
Grant dateSep 30, 2025
Priority date
Expiry dateApr 4, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02647
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.