Template for growing a crystal of a two-dimensional material
US12428749B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 12, 2023 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Apr 4, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.