Method of forming germanium antimony tellurium film
US12431351B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 10, 2023 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Mar 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge2Sb2+aTe5+b, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.