Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12431354B2 · kind B2 · utility
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2,093References
22Claims
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Key dates
| Filing date | Jun 28, 2021 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.