Patent · US Active

Silicon nitride and silicon oxide deposition methods using fluorine inhibitor

US12431354B2 · kind B2 · utility

0Cited by
2,093References
22Claims
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Key dates

Filing dateJun 28, 2021
Grant dateSep 30, 2025
Priority date
Expiry dateOct 4, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.