Method for fabricating contact structure and contact structure
US12431363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a method for fabricating a contact structure and a contact structure. The method for fabricating a contact structure includes: providing a substrate, and sequentially arranging a first polysilicon layer and a first mask layer on a surface of the substrate; performing a first etching process on the first polysilicon layer and the first mask layer to form a stepped structure where a width of the first mask layer is smaller than a width of the first polysilicon layer; performing a second etching process on the substrate by using the first polysilicon layer as a mask to form a trench; depositing a second polysilicon layer in the trench, a top of the second polysilicon layer being not higher than a bottom of the first mask layer; and performing an annealing process to form the contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.