Conformal titanium silicon nitride-based thin films and methods of forming same
US12431388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Jun 13, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a diffusion barrier comprising TiSiN comprises exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.