Semiconductor device and method of forming thin heat sink using e-bar substrate
US12431405B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 13, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate and a semiconductor package disposed over the substrate. An embedded bar (e-bar) substrate is disposed on the substrate around the semiconductor package. A heat sink is formed over the semiconductor package and supported by the e-bar substrate to elevate the heat sink from the substrate and reduce a thickness of the heat sink. A thermal interface material is deposited between the semiconductor package and heat sink. Alternatively, a shield layer can be formed over the semiconductor package and supported by the e-bar substrate. The e-bar substrate has a base layer and a first metal layer formed over a first surface of the base layer. A bump is formed over the first metal layer. A second metal layer can be over a second surface of the base layer opposite the first surface of the base layer. Two or more e-bar substrates can be stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.